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 Spec #CR #Revision #CR CatImpacted VersionTarget ReleaseTitleWG TDoc #CR status at WGWG meeting refWG Source informationTSG TDoc #CR status at TSGTSG meeting refTSG Source informationNew VersionWork ItemsRemarks
See details 36.1334360-F12.13.0Rel-12Correct InformationBitPayload for Sub-Frame 1, 6 and Max T-put of TDD PDSCH RMC Details R4-1610503 agreedRAN4#81ANRITSU LTD Details RP-162459 approvedRAN#74RAN412.14.0TEI12
See details 36.1334360-F12.13.0Rel-12Correct InformationBitPayload for Sub-Frame 1, 6 and Max T-put of TDD PDSCH RMC Details R4-1610503 agreedRAN4#81ANRITSU LTD Details RP-162421 reissuedRAN#74RAN412.14.0TEI12
See details 36.1334356-F12.13.0Rel-12Correction to RRM tests on dual connectivity Details R4-1610489 agreedRAN4#81Ericsson, Burea... Details RP-162417 approvedRAN#74RAN412.14.0LTE_SC_enh_dual...
See details 36.1334346-F12.13.0Rel-12RRM: Correction to TCs A.7.1.7A and A.7.1.7B (Rel-12) Details R4-1610366 agreedRAN4#81Rohde & Schwarz Details RP-162420 approvedRAN#74RAN412.14.0TEI12
See details 36.1334338-F12.13.0Rel-12PCFICH/PDCCH/PHICH Reference channel in UE Cat 0 new CGI RRM test cases Details R4-1610278 agreedRAN4#81ANRITSU LTD Details RP-162414 approvedRAN#74RAN412.14.0LC_MTC_LTE-Perf
See details 36.1334303-F12.13.0Rel-12Corrections on the test cases of UE measurement procedures and measurement performance requirements in R12 Details R4-1610124 agreedRAN4#81Huawei, HiSilicon Details RP-162420 approvedRAN#74RAN412.14.0TEI12
See details 36.1334300-F12.13.0Rel-12Correction on the test cases of RSTD Mesaurement in R12 Details R4-1610121 agreedRAN4#81Huawei, HiSilicon Details RP-162420 approvedRAN#74RAN412.14.0TEI12
See details 36.1334297-F12.13.0Rel-12Correction on SCE test cases R12 Details R4-1610118 agreedRAN4#81Huawei, HiSilicon Details RP-162418 approvedRAN#74RAN412.14.0LTE_SC_enh_L1-Perf
See details 36.1334286-F12.13.0Rel-12Corrections on DC interruption test cases R12 Details R4-1610089 agreedRAN4#81Huawei, HiSilicon Details RP-162420 approvedRAN#74RAN412.14.0TEI12
See details 36.1334176-F12.13.0Rel-12Remove redundant requirement for Intra-frequency relative CSI-RSRP Details R4-1609216 agreedRAN4#81Anritsu, Ericss... Details RP-162418 approvedRAN#74RAN412.14.0LTE_SC_enh_L1-Core
See details 36.1334173-F12.13.0Rel-12PCC and SCC assignment in 20MHz+10MHz test cases A.8.20.2B and A.9.2.27 Details R4-1609209 agreedRAN4#81ANRITSU LTD Details RP-162415 approvedRAN#74RAN412.14.0LTE_CA_B39_B41-Perf
See details 36.13341321F12.13.0Rel-12CR on CSI-RS based measurement conditions R12 Details R4-168708 agreedRAN4#80-BISHuawei, HiSilicon Details RP-162459 approvedRAN#74RAN412.14.0TEI12
See details 36.13341321F12.13.0Rel-12CR on CSI-RS based measurement conditions R12 Details R4-168708 agreedRAN4#80-BISHuawei, HiSilicon Details RP-162421 reissuedRAN#74RAN412.14.0TEI12
See details 36.1334126-F12.13.0Rel-12Corrections to 3DL CA Event triggered reporting Test cases A.8.16.29, A.8.16.30 Details R4-168335 agreedRAN4#80-BISANRITSU LTD Details RP-162416 approvedRAN#74RAN412.14.0LTE_CA_TDD_FDD-Perf
See details 36.1334041-F12.13.0Rel-12Correction on the test cases of autonomous gaps R12 Details R4-167830 agreedRAN4#80-BISHuawei, HiSilicon Details RP-162459 approvedRAN#74RAN412.14.0TEI12
See details 36.1334041-F12.13.0Rel-12Correction on the test cases of autonomous gaps R12 Details R4-167830 agreedRAN4#80-BISHuawei, HiSilicon Details RP-162421 reissuedRAN#74RAN412.14.0TEI12
See details 36.1333999-F12.13.0Rel-12Corrections on inter-frequency measurement test cases for IncMon in R12 Details R4-167754 agreedRAN4#80-BISHuawei, HiSilicon Details RP-162458 approvedRAN#74RAN412.14.0LTE_UTRA_IncMon-Perf