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 Spec #CR #Revision #CR CatImpacted VersionTarget ReleaseTitleWG TDoc #CR status at WGWG meeting refWG Source informationTSG TDoc #CR status at TSGTSG meeting refTSG Source informationNew VersionWork ItemsRemarks
See details 36.21303751F10.3.0Rel-10Clarifications of UE behavior on PUSCH power control Details R1-114465 agreedRAN1#67Fujitsu Details RP-111666 approvedRAN#54R110.4.0
See details 36.21303741F10.3.0Rel-10Clarification on UE's capability of supporting PUCCH format 3 Details R1-114470 agreedRAN1#67Qualcomm Inc., ... Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303731F10.3.0Rel-10Removal of square bracket in HARQ-ACK procedure Details R1-114362 agreedRAN1#67LG Electronics Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303712F10.3.0Rel-10Correction to periodic CSI reports for carrier aggregation Details R1-114466 agreedRAN1#67Panasonic, Texa... Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303701F10.3.0Rel-10Correction on PMI index Details R1-114360 agreedRAN1#67CATT Details RP-111668 approvedRAN#54R110.4.0LTE_eDL_MIMO-Core
See details 36.2130369-F10.3.0Rel-10Clarification of PUCCH 2-1 Operation Details R1-113606 agreedRAN1#66-BISQualcomm Incorp... Details RP-111668 approvedRAN#54R110.4.0LTE_eDL_MIMO-Core
See details 36.2130368-F10.3.0Rel-10Correction for A/N on PUSCH with W=1,2 in case of TDD channel selection Details R1-113580 agreedRAN1#66-BISLG Electronics,... Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303671F10.3.0Rel-10Correction on HARQ-ACK procedure Details R1-113608 agreedRAN1#66-BISLG Electronics,... Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303662F10.3.0Rel-10Clarification on the determination of resource for PUCCH Format 1b with channel selection in TDD mode Details R1-113611 agreedRAN1#66-BISITRI, Qualcomm Inc. Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.2130365-F10.3.0Rel-10Clarification on the HARQ-ACK procedure of TDD UL-DL configuration 5 Details R1-113546 agreedRAN1#66-BISITRI Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.2130364-F10.3.0Rel-10Correction on the notation of SRS transmission comb Details R1-113545 agreedRAN1#66-BISZTE Details RP-111667 approvedRAN#54R110.4.0LTE_UL_MIMO-Core
See details 36.21303631F10.3.0Rel-10Corrections on PUCCH Resource Notation Details R1-113617 agreedRAN1#66-BISSamsung Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303623F10.3.0Rel-10A correction to PDSCH transmission assumption for CQI calculation Details R1-114471 agreedRAN1#67Fujitsu, Newpos... Details RP-111668 approvedRAN#54R110.4.0LTE_eDL_MIMO-Core
See details 36.21303611F10.3.0Rel-10Corrections on PUCCH mode 2-1 Details R1-113543 agreedRAN1#66-BISSamsung, ZTE, L... Details RP-111668 approvedRAN#54R110.4.0LTE_eDL_MIMO-Core
See details 36.2130360-F10.3.0Rel-10Corrections on the notation of k and k_m Details R1-112936 agreedRAN1#66-BISCATT Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.2130359-F10.3.0Rel-10Corrections on TDD PUCCH format 1b with channel selection and two configured serving cells Details R1-112935 agreedRAN1#66-BISCATT Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.2130358-F10.3.0Rel-10Corrections on N_c^{received} Details R1-112934 agreedRAN1#66-BISCATT Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303571F10.3.0Rel-10Miscellaneous corrections on uplink power control Details R1-113542 agreedRAN1#66-BISCATT Details RP-111666 approvedRAN#54R110.4.0LTE_CA-Core
See details 36.21303243F10.3.0Rel-10Accumulation of power control commands from DCI format 3/3A Details R1-113593 agreedRAN1#66-BISEricsson, ST-Er... Details RP-111669 approvedRAN#54R110.4.0LTE-Phys