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 Spec #CR #Revision #CR CatImpacted VersionTarget ReleaseTitleWG TDoc #CR status at WGWG meeting refWG Source informationTSG TDoc #CR status at TSGTSG meeting refTSG Source informationNew VersionWork ItemsRemarks
See details 36.2120153-A11.2.0Rel-11Correction to bit padding of DCI format 1A for secondary cell without uplink component carrier Details R1-132672 agreedRAN1#73NEC Group Details RP-130749 approvedRAN#60R111.3.0LTE_CA-Core
See details 36.2120151-F11.2.0Rel-11Clarification on DL DAI usage in inter-band TDD CA Details R1-132670 agreedRAN1#73Nokia Siemens N... Details RP-130750 approvedRAN#60R111.3.0LTE_CA_enh-Core
See details 36.2120150-F11.2.0Rel-11Correction on ARO bit setting for DL DCIs carried by EPDCCH Details R1-132669 agreedRAN1#73CATT, Texas Ins... Details RP-130752 approvedRAN#60R111.3.0LTE_enh_dl_ctrl-Core
See details 36.2120149-F11.2.0Rel-11Correction on the time span of the DCI Details R1-131667 agreedRAN1#72-BISHuawei, HiSilicon Details RP-130752 approvedRAN#60R111.3.0LTE_enh_dl_ctrl-Core
See details 36.2120148-F11.2.0Rel-11CR on DCI Format 4 payload size Details R1-131666 agreedRAN1#72-BISZTE Details RP-130747 approvedRAN#60R111.3.0COMP_LTE_DL-Cor...
See details 36.21201472F11.2.0Rel-11Correction on the RI bit width Details R1-131815 agreedRAN1#72-BISHuawei, HiSilic... Details RP-130751 approvedRAN#60R111.3.0LTE_eDL_MIMO, C...