• Specification number WG Status
    select
    Meeting
    Target Release
    select
    TSG Status
    select
    Work Item
    Entities
Data pager
Data pager
1
Page size:
PageSizeComboBox
select
 7 items in 1 pages
 Spec #CR #Revision #CR CatImpacted VersionTarget ReleaseTitleWG TDoc #CR status at WGWG meeting refWG Source informationTSG TDoc #CR status at TSGTSG meeting refTSG Source informationNew VersionWork ItemsRemarks
See details 36.1336184-A13.13.0Rel-13Corrections to incmon testcases Details R4-1816760 agreedRAN4#89Ericsson Details RP-182379 approvedRAN#82RAN413.14.0LTE_SC_enh_dual...
See details 36.1336147-F13.13.0Rel-13Clarification on the applicability of side condition for CE UE R13 Details R4-1815547 agreedRAN4#89Huawei, HiSilicon Details RP-182382 approvedRAN#82RAN413.14.0TEI13
See details 36.13360851F13.13.0Rel-13CR on NB random access test cases R13 Details R4-1816339 agreedRAN4#89Huawei, HiSilicon Details RP-182382 approvedRAN#82RAN413.14.0TEI13
See details 36.13360771F13.13.0Rel-13CR on NRSRP accuracy applicability for UE Category NB1 R13 Details R4-1816134 agreedRAN4#89Huawei, HiSilicon Details RP-182382 approvedRAN#82RAN413.14.0TEI13
See details 36.1336056-F13.13.0Rel-13Corrections to feMTC RRM test case A.8.1.28 (Rel-13) Details R4-1814987 agreedRAN4#89Rohde & Schwarz Details RP-182382 approvedRAN#82RAN413.14.0TEI13
See details 36.13360411F13.13.0Rel-13Correction to FDD-FS3 Intra-frequency event triggered reporting in DRX Details R4-1816133 agreedRAN4#89ANRITSU LTD Details RP-182381 approvedRAN#82RAN413.14.0LTE_LAA-Perf
See details 36.1336022-A13.13.0Rel-13CR 36.133 Correction of references in OCNG patterns Rel-13 Details R4-1813432 agreedRAN4#88-BisEricsson Details RP-182379 approvedRAN#82RAN413.14.0TEI12